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1 Ergebnisse
1
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs:
, In:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
,
Junk, Yannik
;
Frauenrath, Marvin
;
Han, Yi
... - p. 364-367 , 2022
Link:
https://doi.org/10.1109/ESSDERC55479.2022.9947133
RT T1
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
: T1
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-9947133&Exemplar=1&LAN=DE A1 Junk, Yannik A1 Frauenrath, Marvin A1 Han, Yi A1 Diaz, Omar Concepcion A1 Bae, Jin-Hee A1 Hartmann, Jean-Michel A1 Grutzmacher, Detlev A1 Buca, Dan A1 Zhao, Qing-Tai YR 2022 K1 Performance evaluation K1 Temperature distribution K1 MOSFET K1 Gallium arsenide K1 Cryogenics K1 Logic gates K1 MOSFET circuits K1 Germanium-tin (GeSn) alloys K1 gate-all-around nanowires K1 mobility K1 cryogenic electronics SP 364 OP 367 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC55479.2022.9947133 DO https://doi.org/10.1109/ESSDERC55479.2022.9947133 SF ELIB - SuUB Bremen
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