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In-depth electrical characterization of deca-nanometer InGa..:
, In:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
,
Di Santa Maria, Francesco Serra
;
Theodorou, Christoforos
;
Balestra, Francis
... - p. 257-260 , 2022
Link:
https://doi.org/10.1109/ESSDERC55479.2022.9947142
RT T1 <cTitle>ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)</cTitle>: T1 <Title>In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9947142&Exemplar=1&LAN=DE A1 Di Santa Maria, Francesco Serra A1 Theodorou, Christoforos A1 Balestra, Francis A1 Ghibaudo, Gerard A1 Cha, Eunjung A1 Zota, Cezar B. YR 2022 K1 MOSFET K1 Quantum computing K1 Silicon-on-insulator K1 Cryogenics K1 Computer applications K1 Logic gates K1 Silicon K1 III-V K1 cryogenic K1 Y-function K1 characterization K1 InGaAs SP 257 OP 260 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC55479.2022.9947142 DO https://doi.org/10.1109/ESSDERC55479.2022.9947142 SF ELIB - SuUB Bremen
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