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Impact of channel thickness scaling on the performance of G..:
, In:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
,
Alian, Alireza
;
Rodriguez, Raul
;
Yadav, Sachin
... - p. 384-387 , 2022
Link:
https://doi.org/10.1109/ESSDERC55479.2022.9947147
RT T1 <cTitle>ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)</cTitle>: T1 <Title>Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9947147&Exemplar=1&LAN=DE A1 Alian, Alireza A1 Rodriguez, Raul A1 Yadav, Sachin A1 Peralagu, Uthayasankaran A1 Hernandez, Arturo Sibaja A1 Putcha, Vamsi A1 Zhao, Ming A1 ElKashlan, Rana A1 Vermeersch, Bjorn A1 Yu, Hao A1 Bury, Erik A1 Khaled, Ahmad A1 Collaert, Nadine A1 Parvais, Bertr YR 2022 K1 Radio frequency K1 Performance evaluation K1 HEMTs K1 Thermal conductivity K1 Thermal analysis K1 Reliability K1 MODFETs K1 GaN K1 HEMT K1 channel thickness K1 scaling SP 384 OP 387 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC55479.2022.9947147 DO https://doi.org/10.1109/ESSDERC55479.2022.9947147 SF ELIB - SuUB Bremen
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