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1 Ergebnisse
1
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer o..:
, In:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
,
Stecconi, T.
;
Popoff, Y.
;
Guido, R.
... - p. 297-300 , 2022
Link:
https://doi.org/10.1109/ESSDERC55479.2022.9947195
RT T1 <cTitle>ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)</cTitle>: T1 <Title>Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9947195&Exemplar=1&LAN=DE A1 Stecconi, T. A1 Popoff, Y. A1 Guido, R. A1 Falcone, D. A1 Halter, M. A1 Sousa, M. A1 Horst, F. A1 La Porta, A. A1 Offrein, B.J. A1 Bragaglia, V. YR 2022 K1 Fabrication K1 Spectroscopy K1 Metals K1 Europe K1 Switches K1 In-memory computing K1 Hafnium compounds K1 Bilayer ReRAM K1 analog memory K1 interface engineering K1 artificial synapse SP 297 OP 300 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC55479.2022.9947195 DO https://doi.org/10.1109/ESSDERC55479.2022.9947195 SF ELIB - SuUB Bremen
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