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Comparative Analysis of InGaAs/GaAs Quantum Dots Produced b..:

, In: 2022 International Conference on Electrical Engineering and Photonics (EExPolytech),

Babichev, Andrey V. ; Komarov, Sergey D. ; Tkach, Julia S.... - p. 253-256 , 2022

Link: https://doi.org/10.1109/EExPolytech56308.2022.9951000

RT 
T1 <cTitle>2022 International Conference on Electrical Engineering and Photonics (EExPolytech)</cTitle>: T1 <Title>Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9951000&Exemplar=1&LAN=DE
				
A1 Babichev, Andrey V.
A1 Komarov, Sergey D.
A1 Tkach, Julia S.
A1 Kryzhanovskaya, Natalia V.
A1 Nadtochiy, Alexey M.
A1 Blokhin, Alexey A.
A1 Blokhin, Sergei A.
A1 Nevedomskiy, Vladimir N.
A1 Maleev, Nikolay A.
A1 Gladyshev, Andrey G.
A1 Karachinsky, Leonid Ya.
A1 Novikov, Innokenty I.
YR 2022
SN 2771-697X
K1 Temperature measurement
K1 Quantum dot lasers
K1 Temperature
K1 Epitaxial layers
K1 Wavelength measurement
K1 Quantum dots
K1 Stationary state
K1 metal-organic vapour-phase epitaxy
K1 molecular-beam epitaxy
K1 gallium arsenide
K1 InGaAs
K1 Stranski-Krastanow mechanism
SP 253
OP 256
LK http://dx.doi.org/https://doi.org/10.1109/EExPolytech56308.2022.9951000
DO https://doi.org/10.1109/EExPolytech56308.2022.9951000
SF ELIB - SuUB Bremen

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