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1 Ergebnisse
1
A New Layout Method for Junction Field Effect Transistors (..:
, In:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Lynch, Justin
;
Yun, Nick
;
Jang, Seung Yup
.. - p. 127-131 , 2022
Link:
https://doi.org/10.1109/WiPDA56483.2022.9955256
RT T1
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
: T1
A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance
UL https://suche.suub.uni-bremen.de/peid=ieee-9955256&Exemplar=1&LAN=DE A1 Lynch, Justin A1 Yun, Nick A1 Jang, Seung Yup A1 Morgan, Adam J. A1 Sung, Woongje YR 2022 SN 2687-8577 K1 Performance evaluation K1 Fabrication K1 Silicon carbide K1 Layout K1 Logic gates K1 Electric variables K1 JFETs K1 4H-SiC K1 JFET K1 Surface-Buried Gate JFET K1 Lateral-Vertical JFET SP 127 OP 131 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA56483.2022.9955256 DO https://doi.org/10.1109/WiPDA56483.2022.9955256 SF ELIB - SuUB Bremen
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