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1 Ergebnisse
1
A New Cell Topology for 4H-SiC Planar Power MOSFETs and Com..:
, In:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Zhu, Shengnan
;
Liu, Tianshi
;
Salemi, Arash
... - p. 7-10 , 2022
Link:
https://doi.org/10.1109/WiPDA56483.2022.9955263
RT T1 <cTitle>2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)</cTitle>: T1 <Title>A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9955263&Exemplar=1&LAN=DE A1 Zhu, Shengnan A1 Liu, Tianshi A1 Salemi, Arash A1 Jin, Michael A1 White, Marvin H. A1 Sheridan, David A1 Agarwal, Anant K. YR 2022 SN 2687-8577 K1 Performance evaluation K1 MOSFET K1 Silicon carbide K1 Layout K1 Switches K1 Logic gates K1 Capacitance K1 SiC planar power MOSFET K1 Cell topology K1 High-frequency switching K1 High-frequency figure of merit (HF-FOM) K1 Dodocagonal cell K1 Octagonal cell SP 7 OP 10 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA56483.2022.9955263 DO https://doi.org/10.1109/WiPDA56483.2022.9955263 SF ELIB - SuUB Bremen
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