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1 Ergebnisse
1
A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV ..:
, In:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Kim, Dongyoung
;
DeBoer, Skylar
;
Jang, Seung Yup
.. - p. 54-57 , 2022
Link:
https://doi.org/10.1109/WiPDA56483.2022.9955302
RT T1
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
: T1
A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-9955302&Exemplar=1&LAN=DE A1 Kim, Dongyoung A1 DeBoer, Skylar A1 Jang, Seung Yup A1 Morgan, Adam J. A1 Sung, Woongje YR 2022 SN 2687-8577 K1 MOSFET K1 Schottky barriers K1 Layout K1 Failure analysis K1 Metals K1 Leakage currents K1 4H-SiC K1 MOSFETs K1 JBSFETs K1 Short-circuit capability K1 Channeling implantation K1 Schottky metal K1 Schottky width K1 Deep P-well K1 Failure mechanism SP 54 OP 57 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA56483.2022.9955302 DO https://doi.org/10.1109/WiPDA56483.2022.9955302 SF ELIB - SuUB Bremen
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