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1 Ergebnisse
1
Novel 2T DRAM by Storing Data in One Alternative Gate of a ..:
, In:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
,
Zhu, Zheng-Yong
;
Kang, Bok-Moon
;
Dan, Wang
... - p. 1-3 , 2022
Link:
https://doi.org/10.1109/ICSICT55466.2022.9963201
RT T1 <cTitle>2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)</cTitle>: T1 <Title>Novel 2T DRAM by Storing Data in One Alternative Gate of a Double-Gate Transistor with a Low-leakage Oxide Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9963201&Exemplar=1&LAN=DE A1 Zhu, Zheng-Yong A1 Kang, Bok-Moon A1 Dan, Wang A1 Wu, Xie-Shuai A1 Son, Joohwan A1 Yu, Yong A1 Xiao, De-Yuan A1 Dai, Jin A1 Wang, Gui-Lei A1 Yoo, Abraham A1 Cao, Kan-Yu A1 Zhao, Chao YR 2022 K1 Integrated circuit technology K1 Random access memory K1 Logic gates K1 Writing K1 Threshold voltage K1 Transistors K1 Proposals SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT55466.2022.9963201 DO https://doi.org/10.1109/ICSICT55466.2022.9963201 SF ELIB - SuUB Bremen
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