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1 Ergebnisse
1
ESD-immunity Study of High-voltage nLDMOS with Vertical Par..:
, In:
2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA)
,
Mai, Xing-Chen
;
Chen, Shen-Li
;
Lai, Jhong-Yi
.. - p. 1-2 , 2022
Link:
https://doi.org/10.1109/IET-ICETA56553.2022.9971482
RT T1 <cTitle>2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA)</cTitle>: T1 <Title>ESD-immunity Study of High-voltage nLDMOS with Vertical Parasitic Schottky Structures in the Source End</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9971482&Exemplar=1&LAN=DE A1 Mai, Xing-Chen A1 Chen, Shen-Li A1 Lai, Jhong-Yi A1 Liu, Zhi-Wei A1 Chung, Yu-Jie YR 2022 K1 Electrodes K1 Breakdown voltage K1 Schottky diodes K1 Electric breakdown K1 Modulation K1 High-voltage techniques K1 Fault location K1 holding voltage (Vh) K1 secondary breakdown current (It2) K1 Schottky diode K1 trigger voltage (Vt1) K1 TLP SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/IET-ICETA56553.2022.9971482 DO https://doi.org/10.1109/IET-ICETA56553.2022.9971482 SF ELIB - SuUB Bremen
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