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1 Ergebnisse
1
Quasi-Normally-Off operation via Selective Area Growth in h..:
, In:
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
,
Maeda, S.
;
Asubar, J. T.
;
Nagase, I.
... - p. 1-2 , 2022
Link:
https://doi.org/10.1109/IMFEDK56875.2022.9975427
RT T1
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
: T1
Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs
UL https://suche.suub.uni-bremen.de/peid=ieee-9975427&Exemplar=1&LAN=DE A1 Maeda, S. A1 Asubar, J. T. A1 Nagase, I. A1 Urano, S. A1 Nezu, T. A1 Igarashi, T. A1 Baratov, A. A1 Yamamoto, A. A1 Kuzuhara, M. YR 2022 K1 Voltage fluctuations K1 Gallium K1 HEMTs K1 Logic gates K1 Threshold voltage K1 Wide band gap semiconductors K1 MODFETs K1 Gallium nitride K1 AlGaN/GaN MIS-HEMTs K1 Selective Area Growth K1 MOCVD regrowth K1 ZrO2 SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/IMFEDK56875.2022.9975427 DO https://doi.org/10.1109/IMFEDK56875.2022.9975427 SF ELIB - SuUB Bremen
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