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1 Ergebnisse
1
Influence of Y2O3 Doped HfO2 High-k Films on Electrical Pro..:
, In:
2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )
,
Yen, Chih-Feng
;
Huang, Yu-Ya
;
Tsao, Shen-Hao
.. - p. 225-229 , 2022
Link:
https://doi.org/10.1109/ICKII55100.2022.9983564
RT T1 <cTitle>2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )</cTitle>: T1 <Title>Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9983564&Exemplar=1&LAN=DE A1 Yen, Chih-Feng A1 Huang, Yu-Ya A1 Tsao, Shen-Hao A1 Lin, Shih-Hao A1 Cheng, Chun-Hu YR 2022 SN 2770-4785 K1 Technological innovation K1 Annealing K1 Films K1 Voltage K1 Capacitance K1 MIM capacitors K1 Silicon K1 LPD K1 high-k K1 Y2O3 doped HfO2 K1 MOS K1 MIM capacitor SP 225 OP 229 LK http://dx.doi.org/https://doi.org/10.1109/ICKII55100.2022.9983564 DO https://doi.org/10.1109/ICKII55100.2022.9983564 SF ELIB - SuUB Bremen
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