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Silicon as a Model Ion Trap: Time Domain Measurements of Do..:

Vinh, N. Q. ; Greenland, P. T. ; Litvinenko, K....
Proceedings of the National Academy of Sciences of the United States of America. 105 (2008) 31 - p. 10649-10653 , 2008

Link: https://www.jstor.org/stable/25463215

RT Journal
T1 <Title>Silicon as a Model Ion Trap: Time Domain Measurements of Donor Rydberg states</Title>

UL https://suche.suub.uni-bremen.de/peid=jstor-25463215&Exemplar=1&LAN=DE
				
A1 Vinh, N. Q.
A1 Greenland, P. T.
A1 Litvinenko, K.
A1 Redlich, B.
A1 van der Meer, A. F. G.
A1 Lynch, S. A.
A1 Warner, M.
A1 Stoneham, A. M.
A1 Aeppli, G.
A1 Paul, D. J.
A1 Pidgeon, C. R.
A1 Murdin, B. N.
PB National Academy of Sciences
YR 2008
SN 0027-8424
K1 Coherence
K1 Free electron laser
K1 Quantum information
K1 Picosecond population dynamics
K1 Hydrogenic donor impurity
K1 Physical sciences
K1 Chemistry
K1 Chemical elements
K1 Metalloids
K1 Silicon
K1 Applied sciences
K1 Materials science
K1 Material properties
K1 Impurities
K1 Engineering
K1 Mechanical engineering
K1 Machinery
K1 Pumps
K1 Physics
K1 Microphysics
K1 Atomic physics
K1 Atoms
K1 Mechanics
K1 Wave mechanics
K1 Waves
K1 Elastic waves
K1 Phonons
K1 Optical engineering
K1 Optical equipment
K1 Lasers
K1 Particle physics
K1 Energy levels
K1 Ground state
K1 Physical chemistry
K1 Nuclear chemistry
K1 Ion chemistry
K1 Ionization
K1 Subatomic particles
K1 Bosons
K1 Photons
K1 Technology
K1 Tools
K1 Measuring instruments
K1 Ion traps
JF Proceedings of the National Academy of Sciences of the United States of America
VO 105
IS 31
SP 10649
OP 10653
LK http://dx.doi.org/https://www.jstor.org/stable/25463215
DO https://www.jstor.org/stable/25463215
SF ELIB - SuUB Bremen

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