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Transient Phenomena and Impurity Relocation in SIMS Depth P..:

Wittmaack, K. ; Drummond, I. W.
Philosophical Transactions: Mathematical, Physical and Engineering Sciences. 354 (1996) 1719 - p. 2731-2764 , 1996

Link: https://www.jstor.org/stable/54738

RT Journal
T1 <Title>Transient Phenomena and Impurity Relocation in SIMS Depth Profiling using Oxygen Bombardment: Pursuing the Physics to Interpret the Data [and Discussion]</Title>

UL https://suche.suub.uni-bremen.de/peid=jstor-54738&Exemplar=1&LAN=DE
				
A1 Wittmaack, K.
A1 Drummond, I. W.
PB The Royal Society
YR 1996
SN 1364-503X
K1 Physical sciences
K1 Chemistry
K1 Chemical elements
K1 Chalcogens
K1 Oxygen
K1 Metalloids
K1 Silicon
K1 Applied sciences
K1 Materials science
K1 Material properties
K1 Impurities
K1 Physics
K1 Microphysics
K1 Atomic physics
K1 Atoms
K1 Chemical compounds
K1 Chalcogenides
K1 Oxides
K1 Health sciences
K1 Medical sciences
K1 Medical physics
K1 Dosimetry
K1 Radiation dosage
K1 Fluence
K1 Chemical reactions
K1 Reaction mechanisms
K1 Oxidation
K1 Boron
K1 Laboratory techniques
K1 Spectroscopy
K1 Mass spectroscopy
K1 Secondary ion mass spectrometry
K1 Ions
JF Philosophical Transactions: Mathematical, Physical and Engineering Sciences
VO 354
IS 1719
SP 2731
OP 2764
LK http://dx.doi.org/https://www.jstor.org/stable/54738
DO https://www.jstor.org/stable/54738
SF ELIB - SuUB Bremen

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